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EPC2105ENG

Part No EPC2105ENG
Manufacturer EPC
Description TRANS GAN 2N-CH 80V BUMPED DIE
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):80V
Package / Case:Die
Mounting Type:Surface Mount
Packaging:Bulk
Supplier Device Package:Die
Vgs(th) (Max) @ Id:2.5V @ 2.5mA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Mosfet Array 2 N-Channel (Half Bridge) 80V 9.5A, 38A Surface Mount Die
FET Feature:GaNFET (Gallium Nitride)
Power - Max:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:2 N-Channel (Half Bridge)
Series:eGaN®
Current - Continuous Drain (Id) @ 25°C:9.5A, 38A
Other Names:EPC2105ENGR 917-EPC2105ENG EPC2105ENGR EPC2105ENGRH4
Input Capacitance (Ciss) (Max) @ Vds:300pF @ 40V
Rds On (Max) @ Id, Vgs:14.5 mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs:2.5nC @ 5V
Operating Temperature:-40°C ~ 150°C (TJ)

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