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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > EPC2103ENGRT
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EPC2103ENGRT

Part No EPC2103ENGRT
Manufacturer EPC
Description TRANS GAN SYM HALF BRDG 80V
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):80V
Package / Case:Die
Mounting Type:Surface Mount
Packaging:Cut Tape (CT)
Supplier Device Package:Die
Vgs(th) (Max) @ Id:2.5V @ 7mA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Mosfet Array 2 N-Channel (Half Bridge) 80V 23A Surface Mount Die
FET Feature:GaNFET (Gallium Nitride)
Power - Max:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:16 Weeks
Email:info@shengyuic.com
FET Type:2 N-Channel (Half Bridge)
Series:eGaN®
Current - Continuous Drain (Id) @ 25°C:23A
Other Names:917-1146-1 917-1146-1-ND 917-EPC2103ENGRCT
Input Capacitance (Ciss) (Max) @ Vds:7600pF @ 40V
Rds On (Max) @ Id, Vgs:5.5 mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs:6.5nC @ 5V

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