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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > EPC2022ENGRT
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EPC2022ENGRT

Part No EPC2022ENGRT
Manufacturer EPC
Description TRANS GAN 100V 60A BUMPED DIE
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):-
RoHS Status:Cut Tape (CT)
Mounting Type:Surface Mount
Voltage - Breakdown:Die
Vgs(th) (Max) @ Id:3.2 mOhm @ 25A, 5V
Capacitance Ratio:-
FET Feature:N-Channel
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:EPC2022ENGRT
Voltage - Test:1400pF @ 50V
Email:info@shengyuic.com
Series:eGaN®
Current - Continuous Drain (Id) @ 25°C:100V
Other Names:917-1140-1 917-1140-1-ND 917-EPC2022ENGRCT\
Input Capacitance (Ciss) (Max) @ Vds:13nC @ 5V
Description:TRANS GAN 100V 60A BUMPED DIE
Rds On (Max) @ Id, Vgs:90A (Ta)
Polarization:Die
Technology:GaNFET (Gallium Nitride)
Gate Charge (Qg) (Max) @ Vgs:2.5V @ 12mA
Operating Temperature:-40°C ~ 150°C (TJ)
Expanded Description:N-Channel 100V 90A (Ta) Surface Mount Die

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