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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > EPC2031ENGR
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EPC2031ENGR

Part No EPC2031ENGR
Manufacturer EPC
Description TRANS GAN 60V 31A BUMPED DIE
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):-
RoHS Status:Tray
Mounting Type:Surface Mount
Voltage - Breakdown:Die
Vgs(th) (Max) @ Id:2.6 mOhm @ 30A, 5V
Capacitance Ratio:-
IGBT Type:+6V, -4V
FET Feature:N-Channel
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:EPC2031ENGR
Voltage - Test:1800pF @ 300V
Email:info@shengyuic.com
Series:eGaN®
Current - Continuous Drain (Id) @ 25°C:60V
Other Names:917-EPC2031ENGR
Input Capacitance (Ciss) (Max) @ Vds:17nC @ 5V
Description:TRANS GAN 60V 31A BUMPED DIE
Vgs (Max):5V
Rds On (Max) @ Id, Vgs:31A (Ta)
Polarization:Die
Technology:GaNFET (Gallium Nitride)
Gate Charge (Qg) (Max) @ Vgs:2.5V @ 15mA
Operating Temperature:-40°C ~ 150°C (TJ)
Expanded Description:N-Channel 60V 31A (Ta) Surface Mount Die

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