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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > EPC2010
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EPC2010

Part No EPC2010
Manufacturer EPC
Description TRANS GAN 200V 12A BUMPED DIE
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):200V
Power Dissipation (Max):-
Package / Case:Die
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:Die
Vgs(th) (Max) @ Id:2.5V @ 3mA
Drive Voltage (Max Rds On, Min Rds On):5V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 200V 12A (Ta) Surface Mount Die
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:N-Channel
Series:eGaN®
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Other Names:917-1016-2
Input Capacitance (Ciss) (Max) @ Vds:540pF @ 100V
Vgs (Max):+6V, -4V
Rds On (Max) @ Id, Vgs:25 mOhm @ 6A, 5V
Technology:GaNFET (Gallium Nitride)
Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 5V
Operating Temperature:-40°C ~ 125°C (TJ)

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