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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > EPC2100ENG
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EPC2100ENG

Part No EPC2100ENG
Manufacturer EPC
Description TRANS GAN 2N-CH 30V BUMPED DIE
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):30V
Package / Case:Die
Mounting Type:Surface Mount
Packaging:Tray
Supplier Device Package:Die
Vgs(th) (Max) @ Id:2.5V @ 4mA, 2.5V @ 16mA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Mosfet Array 2 N-Channel (Half Bridge) 30V 10A (Ta), 40A (Ta) Surface Mount Die
FET Feature:GaNFET (Gallium Nitride)
Power - Max:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:2 N-Channel (Half Bridge)
Series:eGaN®
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 40A (Ta)
Other Names:917-EPC2100ENG EPC2100ENGR_H1 EPC2100ENGRH1
Input Capacitance (Ciss) (Max) @ Vds:475pF @ 15V, 1960pF @ 15V
Rds On (Max) @ Id, Vgs:8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Gate Charge (Qg) (Max) @ Vgs:4.9nC @ 15V, 19nC @ 15V
Operating Temperature:-40°C ~ 150°C (TJ)

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