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SI8416DB-T1-GE3

Part No SI8416DB-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 8V 16A MICRO
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):8V
Power Dissipation (Max):2.77W (Ta), 13W (Tc)
Package / Case:6-UFBGA
Mounting Type:Surface Mount
Packaging:Original-Reel®
Supplier Device Package:6-microfoot
Vgs(th) (Max) @ Id:800mV @ 250µA
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 8V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-microfoot
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:N-Channel
Series:TrenchFET®
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Other Names:SI8416DB-T1-GE3DKR
Input Capacitance (Ciss) (Max) @ Vds:1470pF @ 4V
Vgs (Max):±5V
Rds On (Max) @ Id, Vgs:23 mOhm @ 1.5A, 4.5V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:26nC @ 4.5V
Operating Temperature:-55°C ~ 150°C (TJ)

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