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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI8407DB-T2-E1
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SI8407DB-T2-E1

Part No SI8407DB-T2-E1
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 20V 5.8A 2X2 6-MFP
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):20V
Power Dissipation (Max):1.47W (Ta)
Package / Case:6-MICRO FOOT®CSP
Mounting Type:Surface Mount
Packaging:Cut Tape (CT)
Supplier Device Package:6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id:900mV @ 350µA
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:P-Channel 20V 5.8A (Ta) 1.47W (Ta) Surface Mount 6-Micro Foot™ (1.5x1)
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:P-Channel
Series:TrenchFET®
Current - Continuous Drain (Id) @ 25°C:5.8A (Ta)
Other Names:SI8407DB-T2-E1CT SI8407DBT2E1
Vgs (Max):±8V
Rds On (Max) @ Id, Vgs:27 mOhm @ 1A, 4.5V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:50nC @ 4.5V
Operating Temperature:-55°C ~ 150°C (TJ)

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