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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI8402DB-T1-E1
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SI8402DB-T1-E1

Part No SI8402DB-T1-E1
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 20V 5.3A 2X2 4-MFP
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):20V
Power Dissipation (Max):1.47W (Ta)
Package / Case:4-XFBGA, CSPBGA
Mounting Type:Surface Mount
Packaging:Cut Tape (CT)
Supplier Device Package:4-Microfoot
Vgs(th) (Max) @ Id:1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 20V 5.3A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:N-Channel
Series:TrenchFET®
Current - Continuous Drain (Id) @ 25°C:5.3A (Ta)
Other Names:SI8402DB-T1-E1CT
Vgs (Max):±8V
Rds On (Max) @ Id, Vgs:37 mOhm @ 1A, 4.5V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:26nC @ 4.5V
Operating Temperature:-55°C ~ 150°C (TJ)

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