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See Product Specifications for product details.
Buy SI8409DB-T1-E1 with confidence from jhykjic.com, 1 Year Warranty
SI8409DB-T1-E1
| Part No | SI8409DB-T1-E1 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET P-CH 30V 4.6A 2X2 4-MFP |
| Lead Free Status / RoHS Status | Lead Free / RoHS compliant |
| Reference Price (In US Dollars) | Get a Quote | ||||
Specifications
Data sheet
| Drain to Source Voltage (Vdss): | 30V |
|---|---|
| Power Dissipation (Max): | 1.47W (Ta) |
| Package / Case: | 4-XFBGA, CSPBGA |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | 4-Microfoot |
| Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | P-Channel 30V 4.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 33 Weeks |
| Email: | info@shengyuic.com |
| FET Type: | P-Channel |
| Series: | TrenchFET® |
| Current - Continuous Drain (Id) @ 25°C: | 4.6A (Ta) |
| Other Names: | SI8409DB-T1-E1TR SI8409DBT1E1 |
| Vgs (Max): | ±12V |
| Rds On (Max) @ Id, Vgs: | 46 mOhm @ 1A, 4.5V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
Introduce
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