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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDMS6673BZ
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FDMS6673BZ

Part No FDMS6673BZ
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 30V 15.2A POWER56
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):30V
Power Dissipation (Max):2.5W (Ta), 73W (Tc)
Package / Case:8-PowerTDFN
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:8-PQFN (5x6)
Vgs(th) (Max) @ Id:3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:P-Channel 30V 15.2A (Ta), 28A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6)
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:8 Weeks
Email:info@shengyuic.com
FET Type:P-Channel
Series:PowerTrench®
Current - Continuous Drain (Id) @ 25°C:15.2A (Ta), 28A (Tc)
Other Names:FDMS6673BZTR
Input Capacitance (Ciss) (Max) @ Vds:5915pF @ 15V
Vgs (Max):±25V
Rds On (Max) @ Id, Vgs:6.8 mOhm @ 15.2A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:130nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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