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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDMS1D5N03
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FDMS1D5N03

Part No FDMS1D5N03
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 30V 218A 8PQFN
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):30V
Power Dissipation (Max):83W (Tc)
Package / Case:8-PowerTDFN
Mounting Type:Surface Mount
Packaging:Cut Tape (CT)
Supplier Device Package:8-PQFN (5x6), Power56
Vgs(th) (Max) @ Id:2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Detailed Description:N-Channel 30V 218A (Tc) 83W (Tc) Surface Mount 8-PQFN (5x6), Power56
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:39 Weeks
Email:info@shengyuic.com
FET Type:N-Channel
Series:PowerTrench®
Current - Continuous Drain (Id) @ 25°C:218A (Tc)
Other Names:FDMS1D5N03CT
Input Capacitance (Ciss) (Max) @ Vds:9690pF @ 15V
Vgs (Max):±16V
Rds On (Max) @ Id, Vgs:1.15 mOhm @ 40A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:63nC @ 4.5V
Operating Temperature:-55°C ~ 150°C (TJ)

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