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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDMS10C4D2N
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FDMS10C4D2N

Part No FDMS10C4D2N
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 100V 17A 8PQFN
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):100V
Power Dissipation (Max):125W (Tc)
Package / Case:8-PowerSMD, Flat Leads
Mounting Type:Surface Mount
Packaging:Cut Tape (CT)
Supplier Device Package:8-PQFN (5x6), Power56
Vgs(th) (Max) @ Id:4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 100V 17A (Tc) 125W (Tc) Surface Mount 8-PQFN (5x6), Power56
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:39 Weeks
Email:info@shengyuic.com
FET Type:N-Channel
Series:-
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Other Names:FDMS10C4D2NOSCT
Input Capacitance (Ciss) (Max) @ Vds:4500pF @ 50V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:4.2 mOhm @ 44A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:65nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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