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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > FDMS3660S-F121
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FDMS3660S-F121

Part No FDMS3660S-F121
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET 2N-CH 30V 13A/30A 8-PQFN
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):30V
Package / Case:8-PowerTDFN
Mounting Type:Surface Mount
Packaging:Cut Tape (CT)
Supplier Device Package:Power56
Vgs(th) (Max) @ Id:2.7V @ 250µA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 30A 1W Surface Mount Power56
FET Feature:Logic Level Gate
Power - Max:1W
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:2 N-Channel (Dual) Asymmetrical
Series:PowerTrench®
Current - Continuous Drain (Id) @ 25°C:13A, 30A
Other Names:FDMS3660S-F121CT FDMS3660S_F121CT FDMS3660S_F121CT-ND
Input Capacitance (Ciss) (Max) @ Vds:1765pF @ 15V
Rds On (Max) @ Id, Vgs:8 mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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