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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SSM6N35FE,LM
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SSM6N35FE,LM

Part No SSM6N35FE,LM
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET 2N-CH 20V 0.18A ES6
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):20V
Package / Case:SOT-563, SOT-666
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:ES6 (1.6x1.6)
Vgs(th) (Max) @ Id:1V @ 1mA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Mosfet Array 2 N-Channel (Dual) 20V 180mA 150mW Surface Mount ES6 (1.6x1.6)
FET Feature:Logic Level Gate
Power - Max:150mW
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:2 N-Channel (Dual)
Series:-
Current - Continuous Drain (Id) @ 25°C:180mA
Base Part Number:SSM6N35
Other Names:SSM6N35FE(TE85L,F) SSM6N35FE(TE85LF)TR SSM6N35FE(TE85LF)TR-ND SSM6N35FE,LM(B SSM6N35FE,LM(T SSM6N35FELMTR SSM6N35FETE85LF
Input Capacitance (Ciss) (Max) @ Vds:9.5pF @ 3V
Rds On (Max) @ Id, Vgs:3 Ohm @ 50mA, 4V
Gate Charge (Qg) (Max) @ Vgs:-
Operating Temperature:150°C (TJ)

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