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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SSM6H19NU,LF
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SSM6H19NU,LF

Part No SSM6H19NU,LF
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 40V 2A 6UDFN
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):40V
Power Dissipation (Max):1W (Ta)
Package / Case:6-UDFN Exposed Pad
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:6-UDFN (2x2)
Vgs(th) (Max) @ Id:1.2V @ 1mA
Drive Voltage (Max Rds On, Min Rds On):1.8V, 8V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 40V 2A (Ta) 1W (Ta) Surface Mount 6-UDFN (2x2)
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:N-Channel
Series:U-MOSVII-H
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Other Names:SSM6H19NU,LF(B SSM6H19NU,LF(T SSM6H19NULFTR
Input Capacitance (Ciss) (Max) @ Vds:130pF @ 10V
Vgs (Max):±12V
Rds On (Max) @ Id, Vgs:185 mOhm @ 1A, 8V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:2.2nC @ 4.2V
Operating Temperature:150°C (TJ)

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