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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SSM6J213FE(TE85L,F
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SSM6J213FE(TE85L,F

Part No SSM6J213FE(TE85L,F
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET P CH 20V 2.6A ES6
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):20V
Power Dissipation (Max):500mW (Ta)
Package / Case:SOT-563, SOT-666
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:ES6
Vgs(th) (Max) @ Id:1V @ 1mA
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:P-Channel 20V 2.6A (Ta) 500mW (Ta) Surface Mount ES6
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:P-Channel
Series:U-MOSVI
Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
Other Names:SSM6J213FE(TE85LFTR SSM6J213FETE85LF
Input Capacitance (Ciss) (Max) @ Vds:290pF @ 10V
Vgs (Max):±8V
Rds On (Max) @ Id, Vgs:103 mOhm @ 1.5A, 4.5V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:4.7nC @ 4.5V
Operating Temperature:150°C (TJ)

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