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See Product Specifications for product details.
Buy SIR165DP-T1-GE3 with confidence from jhykjic.com, 1 Year Warranty
See Product Specifications for product details.
Buy SIR165DP-T1-GE3 with confidence from jhykjic.com, 1 Year Warranty
SIR165DP-T1-GE3
| Part No | SIR165DP-T1-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET P-CHAN 30V POWERPAK SO-8 |
| Lead Free Status / RoHS Status | Lead Free / RoHS compliant |
Specifications
Data sheet
| Drain to Source Voltage (Vdss): | 30V |
|---|---|
| Power Dissipation (Max): | 69.4W (Tc) |
| Package / Case: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Packaging: | Cut Tape (CT) |
| Supplier Device Package: | PowerPAK® SO-8 |
| Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | P-Channel 30V 60A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8 |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 32 Weeks |
| Email: | info@shengyuic.com |
| FET Type: | P-Channel |
| Series: | TrenchFET® Gen III |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Other Names: | SIR165DP-T1-GE3CT |
| Input Capacitance (Ciss) (Max) @ Vds: | 4930pF @ 15V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 15A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 138nC @ 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
Introduce
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