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SIR158DP-T1-GE3

Part No SIR158DP-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 30V 60A PPAK SO-8
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):30V
Power Dissipation (Max):5.4W (Ta), 83W (Tc)
Package / Case:PowerPAK® SO-8
Mounting Type:Surface Mount
Packaging:Cut Tape (CT)
Supplier Device Package:PowerPAK® SO-8
Vgs(th) (Max) @ Id:2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 30V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:27 Weeks
Email:info@shengyuic.com
FET Type:N-Channel
Series:TrenchFET®
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Other Names:SIR158DP-T1-GE3CT
Input Capacitance (Ciss) (Max) @ Vds:4980pF @ 15V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:1.8 mOhm @ 20A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:130nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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