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SIR112DP-T1-RE3

Part No SIR112DP-T1-RE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CHAN 40V
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):40V
Power Dissipation (Max):5W (Ta), 62.5W (Tc)
Package / Case:PowerPAK® SO-8
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:PowerPAK® SO-8
Vgs(th) (Max) @ Id:2.4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 40V 37.6A (Ta), 133A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:N-Channel
Series:TrenchFET® Gen IV
Current - Continuous Drain (Id) @ 25°C:37.6A (Ta), 133A (Tc)
Other Names:SIR112DP-T1-RE3TR
Input Capacitance (Ciss) (Max) @ Vds:4270pF @ 20V
Vgs (Max):+20V, -16V
Rds On (Max) @ Id, Vgs:1.96 mOhm @ 10A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:89nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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