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SI3429EDV-T1-GE3

Part No SI3429EDV-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CHAN 20V TSOP6S
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):20V
Power Dissipation (Max):4.2W (Tc)
Package / Case:SOT-23-6 Thin, TSOT-23-6
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:6-TSOP
Vgs(th) (Max) @ Id:1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:P-Channel 20V 8A (Ta), 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:P-Channel
Series:TrenchFET®
Current - Continuous Drain (Id) @ 25°C:8A (Ta), 8A (Tc)
Other Names:SI3429EDV-T1-GE3TR
Input Capacitance (Ciss) (Max) @ Vds:4085pF @ 50V
Vgs (Max):±8V
Rds On (Max) @ Id, Vgs:21 mOhm @ 4A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:118nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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