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SI3421DV-T1-GE3

Part No SI3421DV-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 30V 8A TSOP-6
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Power Dissipation (Max):2W (Ta), 4.2W (Tc)
Supplier Device Package:6-TSOP
Vgs(th) (Max) @ Id:3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Email:info@shengyuic.com
FET Type:P-Channel
Rds On (Max) @ Id, Vgs:19.2 mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs:69nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss):30V
Package / Case:SOT-23-6 Thin, TSOT-23-6
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Detailed Description:P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Series:TrenchFET®
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Base Part Number:SI3421
Other Names:SI3421DV-T1-GE3TR
Input Capacitance (Ciss) (Max) @ Vds:2580pF @ 15V
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)

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