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SI3417DV-T1-GE3

Part No SI3417DV-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 30V 8A TSOP-6
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):30V
Power Dissipation (Max):2W (Ta), 4.2W (Tc)
Package / Case:SOT-23-6 Thin, TSOT-23-6
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:6-TSOP
Vgs(th) (Max) @ Id:3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:P-Channel 30V 8A (Ta) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:27 Weeks
Email:info@shengyuic.com
FET Type:P-Channel
Series:TrenchFET®
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Other Names:SI3417DV-T1-GE3TR
Input Capacitance (Ciss) (Max) @ Vds:1350pF @ 15V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:25.2 mOhm @ 7.3A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:50nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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