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APTM120A65FT1G

Part No APTM120A65FT1G
Manufacturer Microsemi
Description MOSFET 2N-CH 1200V 16A SP1
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):1200V (1.2kV)
Package / Case:SP1
Mounting Type:Chassis Mount
Packaging:Bulk
Supplier Device Package:SP1
Vgs(th) (Max) @ Id:5V @ 2.5mA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 16A 390W Chassis Mount SP1
FET Feature:Standard
Power - Max:390W
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:2 N-Channel (Half Bridge)
Series:-
Current - Continuous Drain (Id) @ 25°C:16A
Input Capacitance (Ciss) (Max) @ Vds:7736pF @ 25V
Rds On (Max) @ Id, Vgs:780 mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs:300nC @ 10V
Operating Temperature:-40°C ~ 150°C (TJ)

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