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APTM100H45FT3G

Part No APTM100H45FT3G
Manufacturer Microsemi
Description MOSFET 4N-CH 1000V 18A SP3
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):1000V (1kV)
Package / Case:SP3
Mounting Type:Chassis Mount
Packaging:Bulk
Supplier Device Package:SP3
Vgs(th) (Max) @ Id:5V @ 2.5mA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Mosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 18A 357W Chassis Mount SP3
FET Feature:Standard
Power - Max:357W
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Email:info@shengyuic.com
FET Type:4 N-Channel (H-Bridge)
Series:-
Current - Continuous Drain (Id) @ 25°C:18A
Input Capacitance (Ciss) (Max) @ Vds:4350pF @ 25V
Rds On (Max) @ Id, Vgs:540 mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs:154nC @ 10V
Operating Temperature:-40°C ~ 150°C (TJ)

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