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APTM100H80FT1G

Part No APTM100H80FT1G
Manufacturer Microsemi
Description MOSFET 4N-CH 1000V 11A SP1
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):1000V (1kV)
Package / Case:SP1
Mounting Type:Chassis Mount
Packaging:Bulk
Supplier Device Package:SP1
Vgs(th) (Max) @ Id:5V @ 1mA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Mosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 11A 208W Chassis Mount SP1
FET Feature:Standard
Power - Max:208W
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:4 N-Channel (H-Bridge)
Series:-
Current - Continuous Drain (Id) @ 25°C:11A
Input Capacitance (Ciss) (Max) @ Vds:3876pF @ 25V
Rds On (Max) @ Id, Vgs:960 mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs:150nC @ 10V
Operating Temperature:-40°C ~ 150°C (TJ)

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