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SI3585DV-T1-E3

Part No SI3585DV-T1-E3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N/P-CH 20V 2A 6-TSOP
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):20V
Package / Case:SOT-23-6 Thin, TSOT-23-6
Mounting Type:Surface Mount
Packaging:Cut Tape (CT)
Supplier Device Package:6-TSOP
Vgs(th) (Max) @ Id:600mV @ 250µA (Min)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Mosfet Array N and P-Channel 20V 2A, 1.5A 830mW Surface Mount 6-TSOP
FET Feature:Logic Level Gate
Power - Max:830mW
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:N and P-Channel
Series:TrenchFET®
Current - Continuous Drain (Id) @ 25°C:2A, 1.5A
Base Part Number:SI3585
Other Names:SI3585DV-T1-E3CT
Input Capacitance (Ciss) (Max) @ Vds:-
Rds On (Max) @ Id, Vgs:125 mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:3.2nC @ 4.5V
Operating Temperature:-55°C ~ 150°C (TJ)

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