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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI3585CDV-T1-GE3
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SI3585CDV-T1-GE3

Part No SI3585CDV-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N/P-CH 20V 3.9A 6TSOP
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):20V
Package / Case:SOT-23-6 Thin, TSOT-23-6
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:6-TSOP
Vgs(th) (Max) @ Id:1.5V @ 250µA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Mosfet Array N and P-Channel 20V 3.9A, 2.1A 1.4W, 1.3W Surface Mount 6-TSOP
FET Feature:Logic Level Gate
Power - Max:1.4W, 1.3W
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Email:info@shengyuic.com
FET Type:N and P-Channel
Series:TrenchFET®
Current - Continuous Drain (Id) @ 25°C:3.9A, 2.1A
Other Names:SI3585CDV-T1-GE3-ND SI3585CDV-T1-GE3TR
Input Capacitance (Ciss) (Max) @ Vds:150pF @ 10V
Rds On (Max) @ Id, Vgs:58 mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:4.8nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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