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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > HUFA76409D3ST
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HUFA76409D3ST

Part No HUFA76409D3ST
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 60V 18A DPAK
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):60V
Power Dissipation (Max):49W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type:Surface Mount
Packaging:Cut Tape (CT)
Supplier Device Package:TO-252AA
Vgs(th) (Max) @ Id:3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 60V 18A (Tc) 49W (Tc) Surface Mount TO-252AA
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:10 Weeks
Email:info@shengyuic.com
FET Type:N-Channel
Series:Automotive, AEC-Q101, UltraFET™
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Other Names:HUFA76409D3STCT
Input Capacitance (Ciss) (Max) @ Vds:485pF @ 25V
Vgs (Max):±16V
Rds On (Max) @ Id, Vgs:63 mOhm @ 18A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
Operating Temperature:-55°C ~ 175°C (TJ)

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