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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > HUFA75321D3ST
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HUFA75321D3ST

Part No HUFA75321D3ST
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 55V 20A DPAK
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):55V
Power Dissipation (Max):93W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:TO-252AA
Vgs(th) (Max) @ Id:4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 55V 20A (Tc) 93W (Tc) Surface Mount TO-252AA
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:N-Channel
Series:Automotive, AEC-Q101, UltraFET™
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Other Names:HUFA75321D3ST-ND HUFA75321D3STTR
Input Capacitance (Ciss) (Max) @ Vds:680pF @ 25V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:36 mOhm @ 20A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:44nC @ 20V
Operating Temperature:-55°C ~ 175°C (TJ)

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