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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FCP11N60N
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FCP11N60N

Part No FCP11N60N
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 600V 10.8A TO220
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):600V
Power Dissipation (Max):94W (Tc)
Package / Case:TO-220-3
Mounting Type:Through Hole
Packaging:Tube
Supplier Device Package:TO-220-3
Vgs(th) (Max) @ Id:4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 600V 10.8A (Tc) 94W (Tc) Through Hole TO-220-3
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:39 Weeks
Email:info@shengyuic.com
FET Type:N-Channel
Series:SupreMOS™
Current - Continuous Drain (Id) @ 25°C:10.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:1505pF @ 100V
Vgs (Max):±30V
Rds On (Max) @ Id, Vgs:299 mOhm @ 5.4A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:35.6nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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