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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FCP110N65F
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FCP110N65F

Part No FCP110N65F
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 650V 35A TO220
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):650V
Power Dissipation (Max):357W (Tc)
Package / Case:TO-220-3
Mounting Type:Through Hole
Packaging:Tube
Supplier Device Package:TO-220-3
Vgs(th) (Max) @ Id:5V @ 3.5mA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 650V 35A (Tc) 357W (Tc) Through Hole TO-220-3
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:52 Weeks
Email:info@shengyuic.com
FET Type:N-Channel
Series:FRFET®, SuperFET® II
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:4895pF @ 100V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:110 mOhm @ 17.5A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:145nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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