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BSM180D12P3C007

Part No BSM180D12P3C007
Manufacturer LAPIS Semiconductor
Description SIC POWER MODULE
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):1200V (1.2kV)
Package / Case:Module
Mounting Type:Surface Mount
Packaging:Bulk
Supplier Device Package:Module
Vgs(th) (Max) @ Id:5.6V @ 50mA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 180A (Tc) 880W Surface Mount Module
FET Feature:Silicon Carbide (SiC)
Power - Max:880W
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Email:info@shengyuic.com
FET Type:2 N-Channel (Dual)
Series:-
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Other Names:Q9597863
Input Capacitance (Ciss) (Max) @ Vds:900pF @ 10V
Rds On (Max) @ Id, Vgs:-
Gate Charge (Qg) (Max) @ Vgs:-
Operating Temperature:175°C (TJ)

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