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BSM180D12P2C101

Part No BSM180D12P2C101
Manufacturer LAPIS Semiconductor
Description MOSFET 2N-CH 1200V 180A MODULE
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):1200V (1.2kV)
Package / Case:Module
Packaging:Bulk
Supplier Device Package:Module
Vgs(th) (Max) @ Id:4V @ 35.2mA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 204A (Tc) 1130W Module
FET Feature:Silicon Carbide (SiC)
Power - Max:1130W
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:32 Weeks
Email:info@shengyuic.com
FET Type:2 N-Channel (Half Bridge)
Series:-
Current - Continuous Drain (Id) @ 25°C:204A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:23000pF @ 10V
Rds On (Max) @ Id, Vgs:-
Gate Charge (Qg) (Max) @ Vgs:-
Operating Temperature:-40°C ~ 150°C (TJ)

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