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70P259L65BYGI

Part No 70P259L65BYGI
Manufacturer IDT (Integrated Device Technology)
Description IC SRAM 128K PARALLEL 100CABGA
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Package / Case:100-TFBGA
Mounting Type:Surface Mount
Access Time:65ns
Packaging:Tray
Supplier Device Package:100-CABGA (6x6)
Memory Type:Volatile
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:SRAM - Dual Port, Asynchronous Memory IC 128Kb (8K x 16) Parallel 65ns 100-CABGA (6x6)
Voltage - Supply:1.7 V ~ 1.9 V
Memory Size:128Kb (8K x 16)
Memory Interface:Parallel
Write Cycle Time - Word, Page:65ns
Moisture Sensitivity Level (MSL):3 (168 Hours)
Email:info@shengyuic.com
Series:-
Other Names:IDT70P259L65BYGI IDT70P259L65BYGI-ND
Memory Format:SRAM
Technology:SRAM - Dual Port, Asynchronous
Operating Temperature:-40°C ~ 85°C (TA)

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