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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > 2SK3566(STA4,Q,M)
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2SK3566(STA4,Q,M)

Part No 2SK3566(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 900V 2.5A TO-220SIS
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):900V
Power Dissipation (Max):40W (Tc)
Package / Case:TO-220-3 Full Pack
Mounting Type:Through Hole
Packaging:Tube
Supplier Device Package:TO-220SIS
Vgs(th) (Max) @ Id:4V @ 1mA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 900V 2.5A (Ta) 40W (Tc) Through Hole TO-220SIS
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:N-Channel
Series:π-MOSIV
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Other Names:2SK3566(Q) 2SK3566(STA4QM) 2SK3566Q 2SK3566Q-ND 2SK3566STA4QM
Input Capacitance (Ciss) (Max) @ Vds:470pF @ 25V
Vgs (Max):±30V
Rds On (Max) @ Id, Vgs:6.4 Ohm @ 1.5A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
Operating Temperature:150°C (TJ)

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