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2SK3309(Q)

Part No 2SK3309(Q)
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 450V 10A TO220FL
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):450V
Power Dissipation (Max):65W (Tc)
Package / Case:TO-220-3, Short Tab
Mounting Type:Through Hole
Packaging:Tube
Supplier Device Package:TO-220FL
Vgs(th) (Max) @ Id:5V @ 1mA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 450V 10A (Ta) 65W (Tc) Through Hole TO-220FL
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:N-Channel
Series:-
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds:920pF @ 10V
Vgs (Max):±30V
Rds On (Max) @ Id, Vgs:650 mOhm @ 5A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
Operating Temperature:150°C (TJ)

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