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VWM200-01P

Part No VWM200-01P
Manufacturer IXYS Corporation
Description MOSFET 6N-CH 100V 210A V2
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):100V
Package / Case:V2-PAK
Mounting Type:Through Hole
Packaging:Bulk
Supplier Device Package:V2-PAK
Vgs(th) (Max) @ Id:4V @ 2mA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Mosfet Array 6 N-Channel (3-Phase Bridge) 100V 210A Through Hole V2-PAK
FET Feature:Standard
Power - Max:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:6 N-Channel (3-Phase Bridge)
Series:-
Current - Continuous Drain (Id) @ 25°C:210A
Input Capacitance (Ciss) (Max) @ Vds:-
Rds On (Max) @ Id, Vgs:5.2 mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs:430nC @ 10V
Operating Temperature:-40°C ~ 175°C (TJ)

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