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TPC8012-H(TE12L,Q)

Part No TPC8012-H(TE12L,Q)
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 200V 1.8A 8-SOP
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):200V
Power Dissipation (Max):1W (Ta)
Package / Case:8-SOIC (0.173", 4.40mm Width)
Mounting Type:Surface Mount
Packaging:Original-Reel®
Supplier Device Package:8-SOP (5.5x6.0)
Vgs(th) (Max) @ Id:5V @ 1mA
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 200V 1.8A (Ta) 1W (Ta) Surface Mount 8-SOP (5.5x6.0)
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:N-Channel
Series:π-MOSV
Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
Other Names:TPC8012-HDKR TPC8012-HDKR-ND TPC8012-HQDKR TPC8012HTE12LQ
Input Capacitance (Ciss) (Max) @ Vds:440pF @ 10V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:400 mOhm @ 900mA, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V
Operating Temperature:150°C (TJ)

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