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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STQ1HNK60R-AP
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STQ1HNK60R-AP

Part No STQ1HNK60R-AP
Manufacturer STMicroelectronics
Description MOSFET N-CH 600V 400MA TO-92
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):600V
Power Dissipation (Max):3W (Tc)
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
Mounting Type:Through Hole
Packaging:Tape & Box (TB)
Supplier Device Package:TO-92-3
Vgs(th) (Max) @ Id:3.7V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 600V 400mA (Tc) 3W (Tc) Through Hole TO-92-3
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:38 Weeks
Email:info@shengyuic.com
FET Type:N-Channel
Series:SuperMESH™
Current - Continuous Drain (Id) @ 25°C:400mA (Tc)
Other Names:497-15648-3 STQ1HNK60R-AP-ND
Input Capacitance (Ciss) (Max) @ Vds:156pF @ 25V
Vgs (Max):±30V
Rds On (Max) @ Id, Vgs:8.5 Ohm @ 500mA, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:10nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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