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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SSM3J36MFV,L3F
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SSM3J36MFV,L3F

Part No SSM3J36MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET P-CH 20V 0.33A VESM
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):20V
Power Dissipation (Max):150mW (Ta)
Package / Case:SOT-723
Mounting Type:Surface Mount
Packaging:Original-Reel®
Supplier Device Package:VESM
Vgs(th) (Max) @ Id:-
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:P-Channel 20V 330mA (Ta) 150mW (Ta) Surface Mount VESM
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:P-Channel
Series:U-MOSIII
Current - Continuous Drain (Id) @ 25°C:330mA (Ta)
Other Names:SSM3J36MFV(TL3T)DKR SSM3J36MFV(TL3T)DKR-ND SSM3J36MFVL3FDKR
Input Capacitance (Ciss) (Max) @ Vds:43pF @ 10V
Vgs (Max):±8V
Rds On (Max) @ Id, Vgs:1.31 Ohm @ 100mA, 4.5V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:1.2nC @ 4V
Operating Temperature:150°C (TJ)

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