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SQM100N10-10_GE3

Part No SQM100N10-10_GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 100V 100A TO-263
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):100V
Power Dissipation (Max):375W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:TO-263 (D2Pak)
Vgs(th) (Max) @ Id:2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 100V 100A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak)
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:N-Channel
Series:Automotive, AEC-Q101, TrenchFET®
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Other Names:SQM100N10-10-GE3 SQM100N10-10-GE3-ND SQM100N10-10_GE3-ND SQM100N10-10_GE3TR
Input Capacitance (Ciss) (Max) @ Vds:8050pF @ 25V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:10.5 mOhm @ 30A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:185nC @ 10V
Operating Temperature:-55°C ~ 175°C (TJ)

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