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SI7998DP-T1-GE3

Part No SI7998DP-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET 2N-CH 30V 25A PPAK SO-8
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):30V
Package / Case:PowerPAK® SO-8 Dual
Mounting Type:Surface Mount
Packaging:Cut Tape (CT)
Supplier Device Package:PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id:2.5V @ 250µA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Mosfet Array 2 N-Channel (Dual) 30V 25A, 30A 22W, 40W Surface Mount PowerPAK® SO-8 Dual
FET Feature:Logic Level Gate
Power - Max:22W, 40W
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:2 N-Channel (Dual)
Series:TrenchFET®
Current - Continuous Drain (Id) @ 25°C:25A, 30A
Other Names:SI7998DP-T1-GE3CT
Input Capacitance (Ciss) (Max) @ Vds:1100pF @ 15V
Rds On (Max) @ Id, Vgs:9.3 mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs:26nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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