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SI4831BDY-T1-GE3

Part No SI4831BDY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 30V 6.6A 8-SOIC
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):30V
Power Dissipation (Max):2W (Ta), 3.3W (Tc)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:8-SO
Vgs(th) (Max) @ Id:3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:P-Channel 30V 6.6A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 8-SO
FET Feature:Schottky Diode (Isolated)
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:P-Channel
Series:LITTLE FOOT®
Current - Continuous Drain (Id) @ 25°C:6.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:625pF @ 15V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:42 mOhm @ 5A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:26nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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