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See Product Specifications for product details.
Buy SI4666DY-T1-GE3 with confidence from jhykjic.com, 1 Year Warranty
See Product Specifications for product details.
Buy SI4666DY-T1-GE3 with confidence from jhykjic.com, 1 Year Warranty
SI4666DY-T1-GE3
| Part No | SI4666DY-T1-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 25V 16.5A 8-SOIC |
| Lead Free Status / RoHS Status | Lead Free / RoHS compliant |
Specifications
Data sheet
| Drain to Source Voltage (Vdss): | 25V |
|---|---|
| Power Dissipation (Max): | 2.5W (Ta), 5W (Tc) |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | 8-SO |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 25V 16.5A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | info@shengyuic.com |
| FET Type: | N-Channel |
| Series: | TrenchFET® |
| Current - Continuous Drain (Id) @ 25°C: | 16.5A (Tc) |
| Other Names: | SI4666DY-T1-GE3TR SI4666DYT1GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 1145pF @ 10V |
| Vgs (Max): | ±12V |
| Rds On (Max) @ Id, Vgs: | 10 mOhm @ 10A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
Introduce
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