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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN2608(TE85L,F)
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RN2608(TE85L,F)

Part No RN2608(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2PNP PREBIAS 0.3W SM6
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Package / Case:SC-74, SOT-457
Mounting Type:Surface Mount
Packaging:Cut Tape (CT)
Supplier Device Package:SM6
Resistor - Emitter Base (R2):47 kOhms
Current - Collector (Ic) (Max):100mA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6
Resistor - Base (R1):22 kOhms
Voltage - Collector Emitter Breakdown (Max):50V
Power - Max:300mW
Moisture Sensitivity Level (MSL):1 (Unlimited)
Frequency - Transition:200MHz
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Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Series:-
Other Names:RN2608(TE85LF)CT
Transistor Type:2 PNP - Pre-Biased (Dual)
Current - Collector Cutoff (Max):100nA (ICBO)

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