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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN2109MFV,L3F
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RN2109MFV,L3F

Part No RN2109MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Description X34 PB-F VESM TRANSISTOR PD 150M
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
Package / Case:SOT-723
Mounting Type:Surface Mount
Supplier Device Package:VESM
Resistor - Emitter Base (R2):22 kOhms
Current - Collector (Ic) (Max):100mA
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM
Resistor - Base (R1):47 kOhms
Voltage - Collector Emitter Breakdown (Max):50V
Power - Max:150mW
Email:info@shengyuic.com
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Series:-
Other Names:RN2109MFVL3F
Transistor Type:PNP - Pre-Biased
Current - Collector Cutoff (Max):500nA

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