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R6012ANX

Part No R6012ANX
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 600V 12A TO-220FM
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):600V
Power Dissipation (Max):50W (Tc)
Package / Case:TO-220-3 Full Pack
Mounting Type:Through Hole
Packaging:Bulk
Supplier Device Package:TO-220FM
Vgs(th) (Max) @ Id:4.5V @ 1mA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 600V 12A (Ta) 50W (Tc) Through Hole TO-220FM
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:N-Channel
Series:-
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Input Capacitance (Ciss) (Max) @ Vds:1300pF @ 25V
Vgs (Max):±30V
Rds On (Max) @ Id, Vgs:420 mOhm @ 6A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:35nC @ 10V
Operating Temperature:150°C (TJ)

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