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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NVMFS4C302NT1G
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NVMFS4C302NT1G

Part No NVMFS4C302NT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description NFET SO8FL 30V 1.15MO
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):30V
Power Dissipation (Max):3.75W (Ta), 115W (Tc)
Package / Case:8-PowerTDFN, 5 Leads
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:2.2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Detailed Description:N-Channel 30V 43A (Ta), 241A (Tc) 3.75W (Ta), 115W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
FET Feature:-
Manufacturer Standard Lead Time:42 Weeks
Email:info@shengyuic.com
FET Type:N-Channel
Series:Automotive, AEC-Q101
Current - Continuous Drain (Id) @ 25°C:43A (Ta), 241A (Tc)
Lead Free Status:Lead free
Input Capacitance (Ciss) (Max) @ Vds:5780pF @ 15V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:1.15 mOhm @ 30A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:82nC @ 10V
Operating Temperature:-55°C ~ 175°C (TJ)

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