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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTP082N65S3F
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NTP082N65S3F

Part No NTP082N65S3F
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 650V 82 MOHM TO220 P
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):650V
Power Dissipation (Max):313W (Tc)
Package / Case:TO-220-3
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Vgs(th) (Max) @ Id:5V @ 4mA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 650V 40A (Tc) 313W (Tc) Through Hole TO-220-3
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@shengyuic.com
FET Type:N-Channel
Series:FRFET®, SuperFET® II
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Other Names:NTP082N65S3F-ND NTP082N65S3FOS
Input Capacitance (Ciss) (Max) @ Vds:3410pF @ 400V
Vgs (Max):±30V
Rds On (Max) @ Id, Vgs:82 mOhm @ 20A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:81nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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NTP082N65S3F AMI Semiconductor / ON Semiconductor MOSFET N-CH 650V 82 MOHM TO220 P